power transistors 1 publication date: may 2003 sjd00209bed 2sD1640 silicon npn epitaxial planar type darlington for low-frequency output amplification features ? high forward current transfer ratio h fe ? large peak collector current i cp ? high collector-emitter voltage (base open) v ceo absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 100 a, i e = 0 120 v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 0 100 v emitter-base voltage (collector open) v ebo i e = 100 a, i c = 0 5 v collector-base cutoff current (emitter open) i cbo v cb = 25 v, i e = 0 0.1 a emitter-base cutoff current (collector open) i ebo v eb = 4 v, i c = 01 a forward current transfer ratio * 1, 2 h fe v ce = 10 v, i c = 1 a 4 000 40 000 ? collector-emitter saturation voltage * 1 v ce(sat) i c = 1.0 a, i b = 1.0 ma 1.5 v base-emitter saturation voltage * 1 v be(sat) i c = 1.0 a, i b = 1.0 ma 2.0 v parameter symbol rating unit collector-base voltage (emitter open) v cbo 120 v collector-emitter voltage (base open) v ceo 100 v emitter-base voltage (collector open) v ebo 5v collector current i c 2a peak collector current i cp 3a collector power dissipation p c 1.2 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: rank classification rank q r s h fe 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 1: emitter 2: collector 3: base to-126b-a1 package internal connection b 200 ? c e
2sD1640 2 sjd00209bed v be(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce v ce(sat) ? i c 0 0 160 40 120 80 0.4 1.2 0.8 1.6 collector power dissipation p c (w) ambient temperature t a ( c) without heat sink 0 010 24 8 6 3.0 2.5 2.0 1.5 1.0 0.5 collector current i c (a) collector-emitter voltage v ce (v) i b =180? t c =25?c 150? 120? 90? 60? 30? 1 0.1 0.01 0.01 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =1000 t c =100?c 25?c ?5?c 0.01 1 0.1 0.1 1 10 100 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =1000 25?c 100?c t c =?5?c 0.01 0.1 1 10 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c (a) v ce =10v 25?c ?5?c t c =100?c 0 1 60 50 40 30 20 10 10 100 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c safe operation area r th ? t 10 ? 3 0.1 10 ? 2 10 ? 1 1 10 1 10 100 collector current i c (a) collector-emitter voltage v ce (v) i cp i c t=10ms t=1s t=100ms single pulse t c =25?c 10 ? 1 1 10 10 2 10 4 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) free air
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
|
